為廣泛應用于半導體制造領域而優(yōu)化的高感光度G線正型光刻膠      

High sensitivity broad-band,g-line positive-tone photoresist,optimized for

wide production of semiconductor

 1) 高感光度,高產(chǎn)出率

2) 高附著性,特別為濕法刻蝕工藝改進       

3) 廣泛應用于全球半導體行業(yè)   

1) Achievement for high sensitivity and high throughput

2) Improvement for wet etching by high adhesion

3) Trust on delivery reference at wide field and industry

前烘：100℃ 60秒 (DHP)

曝光：G線步進式曝光機/接觸式曝光機

顯影：AZ300MIF (2.38%) 23℃ 60秒 Puddle   

清洗：去離子水30秒

后烘：120℃ 120秒 (DHP)

剝離：AZ剝離液及/或氧等離子體灰化

Pre-bake: 100℃ 60sec.(DHP)

Exposure: g-line stepper and/or Contact Aligner

Developing: AZ300MIF 23℃ 60sec.Puddle

Rinse: DI-water 30sec.

Post-bake: 120℃ 120sec.(DHP)

Stripping: AZ Remover and/or O2 plasma-ashing

Product Name

AZ1500

Viscosity

4.4mPa

20mPa

38mPa

90mPa

Eth

Eop

耐熱性(Thermal Stability)

86msec.

94msec.(1.1xEth)

125℃